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Overview
Electrical Engineering : Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models.
Terms: Winter 2011
Instructors: Mi, Zetian (Winter)
- (3-0-6)
- Prerequisites: ECSE 212 or MIME 262, ECSE 330, ECSE 351 and PHYS 271